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  • SEMICONDUCTOR AND NANO SYSTEMS
Introduction Major Achievements and Activities Funding sources Research Facilities Laboratory
Introduction
The group of Microelectronics and Nanotechnology focuses on studying micro and nano system design, optoelectronic devices, nanoscale devices, MEMS and NEMS fabrication, and micro and nanostructured materials. Major projects include RF components, LEDs and Laser Diodes, Quantum devices, MEMS and NEMS, semiconductor process and materials, and Nanoscale devices and materials.
In the field of Semiconductor and Nano Systems, there are 10 full-time professors, 59 Ph.D. students, 51 MS students and 4 Post-doctor fellow.
Major Achievements and Activities
  • The best paper selection from the Korean Federation of Science and Technology Societies, IEEE best paper award.
  • Good research and Poster Award, Nano Korea 2005 (2005).
  • Best paper Award, Korea University 2005, Seoul, Korea (2005).
  • Best-poster award in the Nano Korea 2012, Best-poster award in the IEEE Nano 2010 Joint Symp with Nano Korea 2010, Best-posters award in the 7th International Meeting on Electrowetting (2010), Runner-up best student paper award 2005 in SPIE's 12th International Symposium on Smart Structures and Materials.
  • Excellence award in the 2009 Campus Patent Strategy Universiade, Participation award in the 2010 Campus Patent Strategy Universiade.
  • Society for Information Display Outstanding Service Award (2009).
  • IWPMA & ISE 2009 Best Poster Award (2009).
  • PVSEC-19 Best Poster Presentation Award (2009).
  • IMID Outstanding poster Award (2011).
  • 2012 top 10 technology among 100 excellent research achievements of Korea government; 2008 President Award at 41th  Science day celebration; Bronze Prize at the IEEE paper contest (2010).
  • Over 1972 international journal and conference papers
Funding sources
  • The Ministry of Information and Communications
  • The Ministry of Commerce, Inustry and Energy
  • The Ministry of Science and Technology
  • The Ministry of Education
  • Korea Science and Engineering Foundation
  • Korea Research Foundation
  • Samsung Electronics Co., Ltd.
  • Samsung SDI Co., Ltd.
  • Samsung Electric Co., Ltd.
  • Samsung Electro-Mechanics
  • LG Electronics Inc.
  • LG.Philips LCD Co., Ltd.
  • LG Chem, Ltd.
  • LG Micron, Ltd.
  • Hynix Semiconductor Inc.
  • Electronics and Telecommunications Research Institute
  • Korean Electronics Technology Institute
Research Facilities
  • Computing Resources and Software
    • 10 HP Enterprise 450 Servers
    • 10 SUN Ultra-60 Dual Processor Workstations
    • OPNET
    • Cadence
    • Synopsys
    • Mentor
  • Testbed
    • 180 cubic meters testbed
    • Network Analyzer
    • Multipurpose Test Equipment and accessories
  • Semiconductor Fabrication Lab
    • E-beam lithography
    • Photolithography
    • Sputters
    • E-beam Evaporator
    • Furnace
    • CVD reactors
    • Thermal Evaporator
    • Rapid thermal anneal chamber
    • RIE
    • Plasam Etcher
    • Wet clean station
  • Semiconductor Fabrication Lab
    • TEM
    • SEM
    • XRD
    • SIMS
    • Auger
    • Raman
    • TGA
    • DTA
    • I-V characteristic measurement
    • C-V characteristic measurement
    • HP 4145
    • HP 4147
    • Low temperature I-V measurement
    • RF I-V measurement
    • Sever (SunFire V480)
    • Sever (SV4500)
    • Sever (SE4500)
    • Digital Storage Oscilloscope (Tektronix TDS6154C)
    • Digital Sampling Oscilloscope (Tektronix TDS8200)
    • Digital Oscilloscope (Tektronix TDS784D)
    • Spectrum Analyzer (HP 8596E)
    • Signal Generator (Agilent E4426B)
    • Arbitrary Waveform Generator (Tektronix AWG420)
    • ADC Evaluation Kit (Analog Devices HSC-ADC-EVAL-DC)
    • Programmable Power Supply (Tektronix PS2520G)
    • Multimeter (Keithley 2000)
Laboratory
  • Semiconductor Devices & CAD Laboratory
  • Semiconductor Devices & CAD Laboratory image The Semiconductor Devices & CAD Laboratory is a multidisciplinary facility for investigating new concepts in optical and electronic materials, devices, and systems based on silicon, gallium arsenide, indium phosphide, GaN, and other group compound semiconductors. Such high performance systems and devices are necessary for the next generation of integrated optoelectronic circuits for telecommunications and information processing, including high speed computing.
    • Our research area is as follows:
    • Analog&Digital Circuit Design (Smart Power IC)
    • ASIC Design
    • Device Design & Analysis (MOSFET, IGBT, GTO, BiCMOS etc.)
    • Study and Development on the Simulation Tools for Semiconductor Devices and Circuits
    • GaN Based (III-Nitride) Semiconductor Thin Film Growth
    • Device & Applications (LED Blue Laser, GaAs Device, InP & InSb Devices)
    • Growth of Dielectric Thin Film (BST, AI203, Ta205, PZT, etc.)
    • Study for nanoscale device &power device
    • Study of Development for Refresh (Leakage, Isolation, Word Line Glitch)
    • Repair, Redundancy Structure & Test Methodology
    • FED, EL, PDP and TFT Design

    For more information, contact : Dr. Man Young Sung

    Tel
    +82-2-3290-3782
    E-mail
    semicad@korea.ac.kr
    Homepage
    http://semicad2.korea.ac.kr
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  • Optoelectronics Laboratory
  • The Optoelectronics Laboratory is a collaborative research environment in which various researches based on optoelectronics and semiconductor physics are studied. Our research covers a whole field of semiconductor devices including (1) material properties (2) design and simulation (3) fabrication technology (4) analysis and application. Our research areas are as follows,
    • Optoelectronic devices for optical communication and display application
    • : Laser diode, LED, Photodiode, Optical switch, etc.
    • MMIC / RFIC devices for WLAN, WCDMA, Blue-tooth application
    • : Low noise amplifier, Power amplifier, Mixer, etc.
    • Bio-chip and Lab-on-a-chip for medical application
    • : Nanomechanical cantilever, Fluorescent detector, Waveguide detector, etc.

    For more information, contact : Dr. Jung Ho Park

    Tel
    +82-2-3290-3226
    E-mail
    jhpark@korea.ac.kr
    Homepage
    http://optolab.korea.ac.kr
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  • Semiconductor & Advanced materials Laboratory
  • The Semiconductor & Advanced materials Laboratory (SAL) focuses on developing new materials for semiconductors and microwave devices. MEMS (Micro Electro Mechanical System) technology is the other research area of SAL. The details of the research subjects are described below.
    • Design and fabrication of Microwave devices
    • Fabrication and characterization of Ferroelectric thin films
    • Sensor design and fabrication by MEMS technology
    • Nano-scale fabrication
    • PLD system
    • Circuit design & Simulation

    For more information, contact : Dr. Byung-moo Moon

    Tel
    +82-2-3290-3689
    E-mail
    byungmoo@korea.ac.kr
    Homepage
    http://sal.korea.ac.kr
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  • Microelectronics, Nano, and Microsystem Laboratory
  • The Microelectronics & Micro/Nano Systems (MiNS) Laboratory is pursuing research in the development of microsystems and nanotechnology-based microsensors and microactuators. Study of semiconductor physics/device/processing is a basis for developing successful Micro/Nano systems. All the researches include modeling, design, fabrication, testing, evaluation, and analysis. Some of the detailed research topics are as follows but not exclusively.
    • Si based semiconductor physics/device/processing
    • Flexible electronics including active/passive devices for a flexible display
    • Bio-MEMS including miniaturized (also, CNT-based) electrochemical biosensors, DNA-chip, neuron - probe, Lab-on-a-Chip.
    • Optical MEMS such as developing micromirror array
    • RF MEMS for wireless handsets.
    • Electroactive polymer application such as microactuators for artificial muscle

    For more information, contact : Dr. James Jungho Pak

    Tel
    +82-2-927-1858
    E-mail
    pak@korea.ac.kr
    Homepage
    http://MiNS.korea.ac.kr
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  • Nanoelectronics Laboratory
  • Nanoelectronics Laboratory image In Nanotubes and Nanodevices Laboratory, our research are focused on the synthesis and characterization of carbon nanotubes (CNTs) and their fundamental properties such as electrical, optical, and mechanical properties. We also have studied various applications using CNTs, which contain field emission devices, CNT based nano sensors, CNT nanobiosensors, CNT tansparent electrode, and CNT based flexible transparent TFTs. Here, our research is pursuing not only fundamental research of CNTs but also realistic applications using CNTs.
    • Synthesis and characterization of carbon nanotubes (CNTs)
    • Field emission properties of CNTs and Nanowires
    • FED, BLU, Plat Lamp, x-ray source, Electron beam source, Microwave amplifier
    • Electrical, optical, and mechanical properties of CNT films
    • CNT sensors and electrodes
    • Flexible transparent CNT-TFTs

    For more information, contact : Dr. Cheol Jin Lee

    Tel
    +82-2-3290-3216
    E-mail
    cjlee@korea.ac.kr
    Homepage
    http://nanotube.korea.ac.kr
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  • Nanotronics Laboratory
  • Nanotronics Laboratory image In the Nanotronics Laboratory, various kinds of nanocrystals and nanowires based devices have been largely researched. Recently, the study of devices using flexible substrates and hybrid devices are actively performed. The details of research performed in Nanotronics Lab are described below.
    • Synthesis of diverse nanocrystals: HgTe, CdTe, HgCdTe, Au, Pt, Si, Ag2S nanocrystals are synthesized by colloidal methods. And Ge nanocrystals are formed by ion implantation methods using TRIM simulation.
    • Fabrication of semiconductor devices
    • Gate material research: SiO2, Al2O3, HfO2, ZrO2, Parelene, PVP are researched for gate materials.
    • Thin Film Transistors: HgTe, CdTe, HgCdTe nanocrsytals are used as an active layer on Si and glass substrates. Poly-ether-sulphone (PES) substrate is studied for flexible thin film transistors, flexible memory devices, flexible logic devices.
    • Nano Floating Gate Memory: Ge, Pt, Ti, Al, Au nanocrystals are acted as charge storage nodes for memory devices.
    • Synthesis of various nanowires: GaN, Si, ZnO, Ge, Ge2O3, SnO2, In2O3 nawires are synthesized by thermal CVD.
    • Nanowire-based FET: GaN, Si, ZnO nanowires are acted as a channel of FET device. For optical and electrical characterizations, PL, Absorption, I-V, C-V measurements are performed.
    • Thin Film Transistors on flexible substrates: ZnO nanowire-based TFTs are fabricated on Poly-ether-sulphone (PES) substrates.
    • Hybird Nanowire-nanoparticle memory devices: Au, Pt, Ti, Al, Poly-Si nanoparticles are attached to ZnO, GaN, Si nanowires for hybrid memory devices.

    For more information, contact : Dr. Sangsig Kim

    Tel
    +82-2-3290-3245
    E-mail
    sangsig@korea.ac.kr
    Homepage
    http://www.korea.ac.kr/~nanotro
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  • Display and Nanosystem Laboratory
  • Display and Nanosystem Laboratory image Display and Nanosystem (DIANA) Laboratory was established by Professor Byeong-Kwon Ju and his students in 1995. Our laboratory has interests in many aspects of technologies including flexible electronics, micro electromechanical systems (MEMS), and nano devices.

    Moreover, Our DIANA Laboratory achieves many kinds of awards such as Society for Information Display (SID) “Best Poster Paper Award” and International Display Workshops (IDW) “Outstanding Poster Paper Award” and so on. DIANA Laboratory has been contributed to lead high technologies by providing in various areas; particularly Information Display and Nano/MEMS technology. Our detail research field includes as follows:
    • Field Emission
    • : Development of photosensitive carbon nanotube pastes and CNT-field emitters based on vertically aligned-emitter array technology
    • OLED (Organic Light Emitting Diode)
    • : Development of core technology for flexible AM-OLED for HQ-LCD TV
    • OTFT (Organic Thin Film Transistor)
    • : Development of processes and materials for passivation layers to improve durability of organic semiconductors
    • : Improvement in electrical characteristics of organic thin film transistors
    • Biochemical-MEMS
    • : Environmental sensing and alerting system with nanowire and nanotube
    • RF-MEMS
    • : Packaging technology of catalytic combustion- type hydrogen gas sensor
    • : Development of packaging for high efficient and low noisy micro-light modulating device

    For more information, contact : Dr. Byeong-Kwon Ju

    Tel
    +82-2-3290-3237
    E-mail
    bkju@korea.ac.kr
    Homepage
    http://diana.korea.ac.kr
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  • Nano Device Laboratory
  • Nano Device Laboratory image The research activities of this laboratory are focused on the electrical properties of nanowire electronic devices and organic electronic devices. Because the basic idea of the electrical properties should be based on the physical interpretation with the device concepts, the fundamental interest on the nano-scale electronic devices can be quite easily applied to other interdisciplinary fields such as bio-electronic devices, the fabrication of the nano-scale patterns and the development of the semiconductor devices using the non-conventional semiconductors. What we have developed so far covers (i) development of the e-beam lithographic techniques on a single individual nanowire (ii) development of the equipments for the nano-engineering such as the lithographic techniques using an optical microscope and scanning tunneling microscope (iii) development of many practical electronic circuits composed of the discrete electronic elements. Our dream is to combine the bottom-up approach with the top-down approach in nanotechnology so that the integrated circuit design will be covered soon in the lab based on the experiences in PCB (printed circuit board) designs.
    • The details of the research subjects are described as following :
    • Fabrication of nanowire electronic devices: carbon nanotube, nanowires
    • Development of E-beam lithographic techniques for fabricating nanowire electronic devices
    • Device characterization of organic light emitting diode in collaboration with LG electronic company.
    • Device characterization of organic thin film transistor (OTFT) in collaboration with LG electronic company.
    • Modeling and simulation of OLED and OTFT devices using conventional or home-made programs
    • Design of the electronic circuit for controlling OTFT or ZnO electronic devices as a form of PCB circuit (Printed Circuit Board)

    For more information, contact : Dr. Gyu Tae Kim

    Tel
    +82-2-3290-3250
    E-mail
    gtkim@korea.ac.kr
    Homepage
    http://nanodev.korea.ac.kr
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  • Advanced Semiconductor Laboratory
  • The Advance Semiconductor Laboratory (ASL) focuses on developing new functional devices using advanced electrical and optical semiconductors. The details of the research subjects are described as below:
    • Analysis of trap energy level, capture cross-section, and concentration within oxide-nitride-oxide (ONO) structure
    • Design, fabrication and characterization of GaN-based HEMT
    • Design, fabrication, and characterization of resonant-cavity type LED/PD integrated devices
    • Design and fabrication of electrode structures for display devices (Organic LEDs, GaN/InGaN LEDs)
    • Nano-pattern process using surface micromachining, bulk micromachining, and LIGA technique
    • Design, simulation, and measurements of ICs such as ReadOut IC, Monolithic Microwave IC, and Display driving circuits
    • Manufacturing of metal silicates/silicides using oxide-based semiconductors such as ZnO, CeO
    • Fabrication of GaN template for GaN epitaxy
    • Formation of nano-structures such as quantum wires/dots based on silicon and III-V compound emiconductors

    For more information, contact : Dr. Tae Geun Kim

    Tel
    +82-2-3290-3255
    E-mail
    tgkim1@korea.ac.kr
    Homepage
    http://asl.korea.ac.kr
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  • Advanced Nanoelectronics and Optoelectronics Laboratory
  • Advanced Nanoelectronics and Optoelectronics research group has been working in the area of both evolutionary and revolutionary nanoelectronics and optoelectronics. Our group is interested in exploring new material, novel fabrication techniques, and novel device concepts for advanced nanoelectronic and optoelectronic systems. The details of our research area are described below.
    • MOS device physics and technology
    • Nanoscale devices
    • 3 dimensional integrated circuits
    • Nonvolatile memory
    • High performance photodetector and LED for monolithic integration

    For more information, contact : Dr. Hyun Yong Yu

    Tel
    +82-2-3290-4830
    E-mail
    yuhykr@korea.ac.kr
    Homepage
    http://anol.korea.ac.kr
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